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APT30M30JLL 300V 88A 0.030 S G D S POWER MOS 7 (R) R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 SO 2 T- 27 "UL Recognized" ISOTOP (R) * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package D G S All Ratings: TC = 25C unless otherwise specified. APT30M30JLL UNIT Volts Amps 300 88 352 30 40 520 4.16 -55 to 150 300 88 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 300 0.030 100 500 100 3 5 (VGS = 10V, ID = 44A) Ohms A nA Volts 7-2004 050-7154 Rev B Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT30M30JLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 150V ID = 88A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 150V ID = 88A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 200V, VGS = 15V ID = 88A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 200V, VGS = 15V ID = 88A, RG = 5 MIN TYP MAX UNIT 7030 1895 110 140 41 70 15 19 35 9 815 1185 850 1250 MIN TYP MAX UNIT Amps Volts ns C nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 88 352 1.3 450 10.0 5 MIN TYP MAX (Body Diode) (VGS = 0V, IS = -88A) Reverse Recovery Time (IS = -88A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -88A, dl S/dt = 100A/s) Peak Diode Recovery dv/ dt 5 Q V/ns THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W 0.24 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25C, L = 0.77mH, RG = 25, Peak IL = 88A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID88A di/dt 700A/s VR 300V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.25 , THERMAL IMPEDANCE (C/W) 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE 1.0 Note: PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 7-2004 050-7154 Rev B Z JC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves RC MODEL 250 ID, DRAIN CURRENT (AMPERES) APT30M30JLL VGS =15 &10V 8V Junction temp. ( "C) 0.0528 0.0203F 200 7.5V 150 7V 100 6.5 6V 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V Power (Watts) 0.0651 0.173F 0.123 Case temperature 0.490F 50 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 250 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 200 1.30 1.20 1.10 1.00 0.90 0.80 GS NORMALIZED TO = 10V @ I = 44A D 150 VGS=10V 100 50 TJ = +25C TJ = +125C TJ = -55C VGS=20V 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 0 90 80 ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 40 60 80 100 120 140 160 180 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 20 70 60 50 40 30 20 10 0 25 1.10 1.05 1.00 0.95 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 I V D = 44A = 10V 2.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) GS 1.1 1.0 0.9 7-2004 050-7154 Rev B 1.5 1.0 0.8 0.7 0.6 -50 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 352 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 20,000 10,000 100S APT30M30JLL Ciss 100 C, CAPACITANCE (pF) Coss 1,000 10 1mS 10mS TC =+25C TJ =+150C SINGLE PULSE 100 Crss 1 1 10 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 = 88A 300 12 VDS=60V VDS=150V 100 TJ =+150C TJ =+25C 8 VDS=240V 10 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 120 100 td(on) and td(off) (ns) 0 0 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 200 V DD G td(off) 180 160 = 200V R = 5 T = 125C J 80 60 40 20 0 40 V DD G = 300V 140 tr and tf (ns) L = 100H R = 5 120 100 80 60 40 20 tf T = 125C J L = 100H td(on) tr 100 120 140 160 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G 60 80 100 120 140 160 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 5000 V I DD 0 40 60 80 3500 = 200V = 200V 3000 SWITCHING ENERGY (J) R = 5 D J = 88A T = 125C SWITCHING ENERGY (J) J 4000 T = 125C L = 100H E ON includes 2500 2000 1500 1000 500 0 40 L = 100H EON includes diode reverse recovery. Eoff 300 diode reverse recovery. Eoff 2000 Eon 1000 7-2004 Eon 050-7154 Rev B 100 120 140 160 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 60 80 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 5 Typical Performance Curves APT30M30JLL 90% 10% Gate Voltage TJ125C Gate Voltage td(on) tr 90% Drain Current td(off) tf 90% 10% Drain Voltage TJ125C 5% Switching Energy 10% 5% Drain Voltage Switching Energy 0 Drain Current Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT60DS30 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. * Source Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. Gate APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7154 Rev B 7-2004 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) |
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